| PART |
Description |
Maker |
| MA141WATX MA142AH 2SK663H |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, SILICON, SIGNAL DIODE
30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
PANASONIC CORP
|
| UMP1 DA226U |
0.025 A, 4 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
|
| UMP11NTN UMP1NTR |
0.1 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
0.025 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
|
| MA4X746 |
Silicon epitaxial planar type 0.2 A, 50 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA3S795E |
Silicon epitaxial planar type 0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| MMBD7000 |
0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
DUAL SMALL SIGNAL SWITCHING DIODE
|
General Semiconductor
|
| M1MA151WA |
0.1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
MOTOROLA INC
|
| BAV70-T1 |
0.3 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SENSITRON SEMICONDUCTOR
|
| MMBD7000 |
0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
LITE-ON SEMICONDUCTOR CORP
|
| BAW79BE6433 BAW79BE6327 |
1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS A G
INFINEON TECHNOLOGIES AG
|
|
